http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001329368-A

Outgoing Links

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filingDate 2000-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_300f683c99202833d1fb9434b7631a9a
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publicationDate 2001-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001329368-A
titleOfInvention Silicon film forming method
abstract (57) [Summary] (with correction) [PROBLEMS] To provide a method for manufacturing a silicon film having a uniform film thickness distribution. SOLUTION: An antenna 1 for exciting a helicon wave The H 2 gas 16 is supplied to the glass tube 20 in which the HFC 5 is installed, the SiH 4 gas is supplied between the antenna 15 and the substrate 9, and the antenna 15 for helicon wave excitation is installed in a non-uniform magnetic field. In a cusp magnetic field, and in a method of forming a silicon film by helicon wave plasma CVD, The diameter of the glass tube 20 is set so that the radial distribution of the plasma electron density is double-peaked, and the electron density distribution is changed from peak-shaped to double-peaked.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006319127-A
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Total number of triples: 21.