| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 |
| filingDate |
2000-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54454ee8d2dc5232aefd4f7731e69b82 |
| publicationDate |
2001-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001326421-A |
| titleOfInvention |
Semiconductor laser device |
| abstract |
(57) Abstract: In a semiconductor laser device, a leakage current due to carriers passing between periodic gain regions is reduced to realize a low threshold current I th , high-characteristic temperature operation, and high-speed operation. . SOLUTION: A quantum dot 1 is periodically provided to provide wavelength selectivity, and a quantum well layer 2 is provided at least in a region where the quantum dot 1 is not provided. Is at least partially physically or electrically contacted with the region where the quantum dots 1 are provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014056983-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005268573-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6867057-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7463661-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2003073570-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007534146-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03073570-A1 |
| priorityDate |
2000-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |