http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001308378-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
| filingDate | 2000-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a84e8ce915e493b3fee1b58f55bec2e |
| publicationDate | 2001-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001308378-A |
| titleOfInvention | Method for manufacturing semiconductor light emitting device |
| abstract | (57) [Summary]nPROBLEM TO BE SOLVED: To produce a semiconductor light emitting device with respect to an emission wavelength. Optimal luminous efficiency and output fluctuation rate can be obtained stably Provided is a method for manufacturing a semiconductor light emitting device.nSOLUTION: An n-type GaAs substrate 2 is formed by a low pressure MOCVD method. 2, an n-type GaAs buffer layer 34, a light reflection layer 35, and n -Type InAlP and n-type In 0.5 (Ga 0.4 A l 0.6 ) 0.5 First cladding layer 3 consisting of P pairs 6, undopeIn 0.5 (Ga (1-x) Al x ) 0.5 P active layer 23, p-type InAlP and p-type In 0. 5 (Ga 0.4 Al 0.6 ) 0.5 A second pair of P The cladding layer 37, the current diffusion layer 38, etc. are sequentially epitaxied. Epitaxial growth of each layer when forming by epitaxial growth The process is determined by the Al mixed crystal ratio x of the active layer 23.nTg = 100 × (x) +710 (° C.)nAt the optimum growth temperature Tg obtained in step (1). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007049078-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4692143-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012216734-A |
| priorityDate | 2000-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.