| abstract |
An object of the present invention is to provide a method for producing semiconductor ultrafine particles which suppresses undesired side reactions such as coloring and precipitation due to external light, and is excellent in color tone, solubility and particle size controllability. SOLUTION: In producing semiconductor ultrafine particles by crystal growing a semiconductor raw material in a liquid phase, a method of producing semiconductor ultrafine particles, wherein a process of growing a semiconductor crystal is performed under light shielding conditions. |