| abstract |
(57) [PROBLEMS] To provide a nonvolatile memory which can be formed integrally with another semiconductor device and can be reduced in size. SOLUTION: A memory TF constituting a nonvolatile memory T, switching TFT, and other peripheral circuits Thus, it is integrally formed on the substrate. By forming the memory TFT and the switching TFT on the same semiconductor active layer, and by forming the semiconductor active layer of the memory TFT thinner than the semiconductor active layers of the other TFTs, the low voltage writing / erasing of the memory TFT is performed. Can be realized, Provided is a nonvolatile memory that hardly deteriorates and can be reduced in size. |