http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001295046-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_74973199515dbabd2310245aab03e282 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate | 2000-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc6653a02a228c9944fd60e2a8b97bdc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_146d67a1a66fc491fc436983d8caa722 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa5476e5d6c33622b23c8abb7b1b8de7 |
| publicationDate | 2001-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001295046-A |
| titleOfInvention | Copper thin film vapor deposition equipment |
| abstract | PROBLEM TO BE SOLVED: To form a thin copper film having a desired film thickness with a high film forming speed, good film quality in which impurities are unlikely to remain, and low cost using inexpensive chlorine or hydrogen chloride as a source gas. To provide a copper thin film vapor deposition apparatus capable of performing the above steps. SOLUTION: A reaction container in which a substrate to be processed is disposed, an introduction container disposed in the reaction container and having a copper injection plate provided with a plurality of injection holes, and a copper injection plate are provided in the copper injection plate. Temperature control means, a source gas supply pipe inserted into the introduction container, for supplying chlorine or hydrogen chloride, and plasma generation means for generating a plasma of chlorine or hydrogen chloride in the introduction container, Atomic reducing gas generating means for generating an atomic reducing gas at least in the vicinity of the substrate to be processed in the reaction vessel, and evacuation means for evacuating the gas in the reaction vessel and the introduction vessel. It is characterized by having. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008515161-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4861329-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100537320-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7048973-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1338674-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010153897-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7112768-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2022099949-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2128304-A1 |
| priorityDate | 2000-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.