| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0042 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2000-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5655d34877a5dd7b12388ac97b32c841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c46fb03ebf5941ce52422ee985b3321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0ec16daf6e52f8246be20c51e3d7498 |
| publicationDate |
2001-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001295025-A |
| titleOfInvention |
Two-stage AlN-PVD to improve film properties |
| abstract |
(57) Abstract: A method for forming an aluminum nitride layer on a substrate in a processing chamber. A first aluminum nitride layer is deposited on a substrate at a first chamber pressure, and then a second aluminum nitride layer is deposited on the aluminum nitride nucleation layer at a higher second chamber pressure. The first aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma in a processing chamber at a chamber pressure of about 1.5 to 3 mTorr. A second aluminum nitride layer is deposited by sputtering at a chamber pressure of about 5-10 mTorr. The processing can be performed in the same processing chamber while maintaining the substrate temperature preferably between 125-500C. According to the present invention, aluminum nitride having a favorable crystal orientation is obtained at a high deposition rate, and the properties of the layer are improved. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7128515-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006508242-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020077788-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4741241-B2 |
| priorityDate |
1999-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |