http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001294811-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D5-25 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-02 |
| filingDate | 2000-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_587775c2e54656b916ab8a22c9214dee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_707b65ed537e0dcdcd0ac90952ad93d5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22feff9bd375d1a4d931ae48d9034e27 |
| publicationDate | 2001-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001294811-A |
| titleOfInvention | Method for producing film forming composition, film forming composition, film forming method and silica-based film |
| abstract | (57) [Summary] (Modified) [PROBLEMS] To obtain a silica-based film having excellent long-term storage stability, comparative dielectric constant characteristics after PCT, and mechanical strength as an interlayer insulating film material for semiconductor devices. SOLUTION: Silane R a Si(OR 1 ) 4-a (1) Si(OR 2 ) 4 (2) R represented by the following formulas (1) to (3) 3 b (R 4 O) 3 -b Si- (R 7) d Si (O R 5 ) 3-c R 6 c (3) (wherein R is —H, —F or a monovalent organic group, R 1 to R 6 Is a monovalent organic group, R 7 is —O—, a phenylene group or — (CH 2 ) n- a is 1 to 2, b and c are 0 to 2, and d is 0. 1, n is a number from 1 to 6) and at least one compound is hydrolyzed and condensed in the presence of a basic compound, water, an alcohol having a boiling point of 100° C. or lower, and a solvent represented by the formula (4). Obtaining a film-forming composition, R 8 O(CHCH 3 CH 2 O) e R 9 (4) and this is applied to a substrate and heated to form a silica film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006059663-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008201833-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010111806-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007049440-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5764863-B2 |
| priorityDate | 2000-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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