http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001291916-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
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filingDate 2000-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_293407de71eb74e5b37c7520455d48ce
publicationDate 2001-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001291916-A
titleOfInvention Method of forming thin film for hall element
abstract PROBLEM TO BE SOLVED: To provide a method for forming a thin film for a Hall element having a high hole mobility μ H and a high product sensitivity (μ H · Rs) by a simple method. SOLUTION: A step of depositing a stoichiometric composition polycrystalline thin film for a Hall element (InSb thin film) on a substrate, and a deposition substrate 1a, 1 on which the polycrystalline thin film for a Hall element is deposited. , and at least a step of locally heating the surface of b, 1c,... By moving the substrate holder 14, the local heating zone region by the local heater 11 becomes the substrate 1a, 1b, 1c,... At a constant relative speed. The size of the local heating zone region is defined by the size of the window 12 of the blind plate (shutter plate) 13.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016131565-A1
priorityDate 2000-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 21.