http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001274266-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-112 |
| filingDate | 2000-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d9b884e8e6f3f936acd6e2a5cf9f647 |
| publicationDate | 2001-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001274266-A |
| titleOfInvention | Mask ROM and manufacturing method thereof |
| abstract | (57) Abstract: A mask ROM capable of accurately implanting ions only in a desired channel region, thereby achieving miniaturization, and capable of shortening TAT by ion implantation after forming a gate electrode. A manufacturing method is provided. A plurality of gate insulating films and gate electrodes are formed on a silicon substrate, and an implantation mask material is formed between the gate electrodes. An interlayer insulating film 7 is formed on an upper layer of the implantation mask material 1. The implantation mask material 1 has a smaller projection range of impurities in ion implantation than the gate electrode 4 and the interlayer insulating film 7. After a resist 5 having a pattern corresponding to the program is formed on the interlayer insulating film 7, the interlayer insulating film 7 is formed. From above, ion implantation for programming is performed into a desired channel region 9 below the gate electrode 4. |
| priorityDate | 2000-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.