http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001267185-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-028
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filingDate 2000-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27421cdb0f18e4d4d4e757e076171ae6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8aba4c058e12bfba999f17ed7563d82
publicationDate 2001-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001267185-A
titleOfInvention Method for manufacturing solid electrolytic capacitor
abstract PROBLEM TO BE SOLVED: To provide a method for manufacturing a solid electrolytic capacitor capable of suppressing damage to a dielectric oxide film during formation of a manganese oxide, achieving an excellent capacity achievement ratio, and further improving reliability. With the goal. SOLUTION: An anode body 1 having a dielectric oxide film layer 2 formed thereon Is immersed in a manganese nitrate solution and then dehydrated to form an anhydrous manganese nitrate layer. Then, the anode body 1 is immersed in an aqueous permanganate solution and dried to form a manganese dioxide layer. The production method of forming a conductive polymer layer by electrolytic polymerization at the same time eliminates the need for a high-temperature thermal decomposition reaction to form a manganese dioxide layer, thereby suppressing damage to the dielectric oxide film layer 2 and reducing leakage current. In addition, since the covering area can be increased by forming more manganese oxide layers, the covering area of the conductive polymer by the subsequent electrolytic polymerization can be improved, and an excellent capacity achievement rate can be exhibited. is there.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112837944-B
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priorityDate 2000-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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