| abstract |
(57) [Problem] To manufacture a silicon carbide bonded body suitable for use in a semiconductor manufacturing process, and to improve bonding strength without lowering purity. SOLUTION: At the time of bonding of a silicon carbide base material, silicon oxide is formed on the surface of the silicon carbide base material, and a heat reaction is performed with aluminum or an alloy thin film interposed therebetween. By performing the bonding, the reaction between silicon carbide and aluminum is prevented, and by forming a composite phase of alumina and aluminum or an alloy thereof at the silicon carbide bonding interface, strength deterioration due to the formation of aluminum carbide is prevented. It is to prevent. |