| abstract |
(57) [Summary] A barrier metal which can be used for a semiconductor device can be made extremely thin. Further, the manufacturing process is shortened and the manufacturing cost of the semiconductor device is reduced. A lower electrode of a capacitor on a semiconductor substrate is provided. An insulating layer (eg, a thermal nitrided layer 10) formed on the surface of the conductor film and having good step coverage such as 9a is converted into a modified layer 11 which is a conductive barrier layer. Alternatively, part or all of the insulating layer formed on the surface of the insulating film on the semiconductor substrate is modified into a conductive barrier layer. Here, the reforming is performed by heating the semiconductor substrate at a predetermined temperature and simultaneously irradiating the surface of the insulating layer with a high-melting metal excited by plasma. Here, Ti, Ta, Ni, Mo, W or the like is used. |