http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001255646-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f481982f9992cbb527a6d31589832958 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 |
| filingDate | 2001-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_237f818db3ffe6e416d3b6213aa44d24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85ebd37e78970e3212aee0ba4d65edc4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfcfc3db1e18b6ac525ddc63a61b2674 |
| publicationDate | 2001-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001255646-A |
| titleOfInvention | Device manufacturing method and resist material |
| abstract | (57) Abstract: A device manufacturing method and a resist material used in the method are provided. SOLUTION: The resist material contains a polymer used in combination with a dissolution inhibitor and a photoacid generator (PAG). The dissolution inhibitor comprises two or more acid labile groups and one tertiary substituent (acid labile group, saturated straight chain, branched chain, cyclic or alicyclic hydrocarbon group having 18 or less carbon atoms, An aliphatic carboxylic acid derivative having an oxyalkyl group, a sulfur-containing group, a hydrophilic group having a hydroxy group or a cyano group). Optionally, the polymer has acid labile groups that greatly reduce the solubility of the polymer in aqueous base. A film of resist material is formed on the substrate and exposed to writing radiation. Radiation induces chemical changes in the resist material that make the exposed resist material more soluble in aqueous base than the unexposed portions of the resist material. The image introduced into the resist material is developed by conventional methods and then transferred to the lower substrate. |
| priorityDate | 2000-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 92.