http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001249094-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_74973199515dbabd2310245aab03e282 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N25-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N25-20 |
| filingDate | 2000-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bcd425ff1fd4f88b8e144ec6ae70faf |
| publicationDate | 2001-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001249094-A |
| titleOfInvention | Measurement method of heat distribution of semiconductor device |
| abstract | (57) Abstract: Provided is a method for measuring heat distribution of a semiconductor element, which can measure a heat generation temperature distribution (power loss distribution) of a semiconductor element during operation with high accuracy. SOLUTION: In a semiconductor element heat distribution measurement method for measuring a surface temperature distribution on a main surface of a semiconductor element in order to evaluate an in-plane distribution of power loss during operation of the semiconductor element, the heat loss is measured more than a semiconductor element to be measured. An object having a large heat capacity, for example, a metal plate is attached to the back surface side of the semiconductor element, and the surface temperature of the main surface of the semiconductor element is measured using an infrared radiation thermometer while cooling the whole semiconductor element in operation. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009244144-A |
| priorityDate | 2000-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.