http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001244235-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
| filingDate | 2000-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebd58ada7de8f9109f304b9313dee4c7 |
| publicationDate | 2001-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001244235-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Problem] To reduce variations in progress of etching of a compound semiconductor layer. A metamorphic layer (9a) formed on the top of a p-InGaAsP layer (5) is formed together with a p-InGaAsP layer (5) by In. Etching is performed using an etchant having no selectivity due to the composition of GaAsP, the metamorphic layer 9a is removed, and the surface of the p-InGaAsP layer 5 is made pure. As a result, in the next etching, the variation in the distribution of the etching rate on the same substrate is reduced, and the variation in the distribution of the etching rate between the substrates is also reduced. |
| priorityDate | 1999-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.