| abstract |
(57) [Problem] To reduce the area required for an electrode for electrical connection of a light emitting element, to realize a reduction in the size of the entire light emitting element and an improvement in luminance and light extraction efficiency of the light emitting element. SOLUTION: A GaN-based LED element 1 having a double hetero structure composed of a GaN layer or the like formed on a sapphire substrate, and a Si diode element 2 formed on a silicon substrate It is mounted face down on the top. Between the p-electrode 5 of the GaN-based LED element 1 and the n-electrode 8 of the Si diode element 2 and the n-electrode 6 of the GaN-based LED element 1 And the p-electrode 7 of the Si diode element 2 are electrically connected via Au micro bumps 11 and 12, respectively, and the Si diode element 2 functions to protect the LED element 1 from electrostatic breakdown. . |