http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001230244-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate | 2000-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e9014cc8c04e2e73f9f4f0c9f21532e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4901c9c0e18eb8f9f0c4805be4e7da48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77f675b11a0c905a16527bb06322667a |
| publicationDate | 2001-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001230244-A |
| titleOfInvention | Method of forming insulating film and multilayer wiring |
| abstract | (57) Abstract: A method for efficiently growing a wiring interlayer insulating film having high heat resistance and CMP resistance in forming a low dielectric constant polymer film on a semiconductor substrate. SOLUTION: Divinylsiloxane bisbenzocyclobutene monomer is vaporized by a vaporization controller 6, introduced into a reaction chamber 11, and heated to 350 ° C. or more in a low power plasma of 0.2 W / cm 2 or less. Plasma-polymerized divinylsiloxane-bis-benzocyclobutene is grown on the substrate 14 so that a benzocyclobutene film having high heat resistance can be efficiently formed. In the early stage of the growth, a plasma-polymerized divinylsiloxane / bis-benzocyclobutene film having a relatively small dielectric constant is grown at a low growth pressure, and then the growth pressure is increased to obtain a dense plasma-polymerized divinylsiloxane / bis-benzocyclobutene film. By continuously growing butene film, the mechanical strength of the film surface is enhanced and CM Ensure P tolerance. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005223012-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7968471-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007221165-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8823079-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004095865-A |
| priorityDate | 2000-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.