| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2000-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7d0ab6b71a522ccf67fc443e5af881d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_532929382ff6d7f4298b231b891f9f43 |
| publicationDate |
2001-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001223361-A |
| titleOfInvention |
Method for manufacturing field effect transistor |
| abstract |
(57) Abstract: A high-quality MOS interface is obtained at a low process temperature. SOLUTION: A MOS interface having a low interface order density is formed by oxygen radical treatment, and an insulating film is formed continuously by low-damage SiO vapor deposition in an oxygen radical atmosphere. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7759598-B2 |
| priorityDate |
2000-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |