http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001223181-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_069a92549123806a5d654dc036a676e9 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35 |
| filingDate | 2000-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70e5ba0f86d88bd85f615a578d9f9678 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddde87953070fb8b36722f266ace97d3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94d99c4f161e76265365f4a90ac86001 |
| publicationDate | 2001-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001223181-A |
| titleOfInvention | Substrate wiring forming method and apparatus |
| abstract | PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a wiring on a base material, which can obtain a sound wiring structure having no defect inside a fine recess for forming wiring on the base material by sputtering. SOLUTION: A substrate 2 and a target 4 made of a conductive material are arranged opposite to each other in a chamber 1, a high voltage is applied between the substrate 2 and the target 4, and an argon gas or the like introduced into the chamber 1 is provided. Is accelerated into high-energy particles which are ionized and collide with the target 4, A method for forming wiring of a substrate by bipolar DC magnetron sputtering in which a fine dent formed in the base material 2 is covered or embedded with the conductive material particles jumping out, wherein the fine dent formed on the surface of the base material 2 When the step of coating or embedding is performed, the pressure in the chamber is set to 1.33 × 10 −2 to 2. 7 × 10 −1 Pa, and the potential difference between the base material 2 and the target 4 is set to a value in the range of 0.8 to 30 kV. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007099780-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006043554-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006043551-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100887444-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100904779-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100663206-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7790626-B2 |
| priorityDate | 2000-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.