| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca748d5cbfb6d9d2f2c6013230fccd73 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-358
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2000-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9047ee70c22155c24962164030b0abf4 |
| publicationDate |
2001-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001210647-A |
| titleOfInvention |
Method of forming metallization structure in integrated circuit |
| abstract |
(57) Abstract: A method for improving a metallization structure and a semiconductor integrated circuit is provided. SOLUTION: After a wetting layer is formed on a topography by an ion metal plasma deposition method, substantially the entire bulk metal layer is formed on the wetting layer by a sputter deposition method in a single deposition chamber. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6989330-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009164510-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6856018-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002176057-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0246810-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007300113-A |
| priorityDate |
1999-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |