http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001210644-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate | 2000-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_185383a7853cd470905dd1f34dda5423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8270b7b2bfac34cfd8067d3ee13ad26c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8565c7dcab5dd9f93c2d136c5f6496c8 |
| publicationDate | 2001-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001210644-A |
| titleOfInvention | Semiconductor device and method of manufacturing semiconductor device |
| abstract | [PROBLEMS] To uniformly recess-etch the surface of a wiring layer. A step of forming a groove in a silicon oxide film on a silicon substrate; a step of depositing a TaN film and a Cu wiring material along the surface of the silicon oxide film; With respect to the surface of the TaN film 17, A flattening process is performed until the silicon oxide film 14 is exposed, A step of burying the TaN film 17 and the Cu damascene wiring 18 in the groove 16, hydrogen peroxide reacting with Cu, A recess etching process is performed on the Cu damascene wiring 18 using an etching solution containing glycine that forms a complex with Cu ions and water that dissolves the complex. forming a recess 19 by retreating the surface of the u-damascene wiring 18; forming a TaN film 20 so as to fill the recess 19 on the Cu damascene wiring 18 and the silicon oxide film 14; , Silicon oxide film 1 4 to form a TaN film 20 in the recess 20 by flattening until the surface of the substrate 4 is exposed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11616085-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8565016-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7261567-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11211408-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102481037-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10644039-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160039546-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020088178-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020061567-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016072633-A |
| priorityDate | 2000-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.