http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001196471-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 2000-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0231a17b8bb71b0439b758994851cd4c |
| publicationDate | 2001-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001196471-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | [PROBLEMS] To separately form the thickness of a gate insulating film without damaging a semiconductor substrate on which the gate insulating film is formed while eliminating an influence on transistor characteristics and an increase in the number of exposure masks. Provided is a method for manufacturing a semiconductor device. A thin second gate oxide film formed on a semiconductor substrate in a second region passes through a step of removing a through oxide film after ion implantation and forming a gate oxide film only once. . Also, since the through oxide film 20 in the first region is removed using the resist film R1 as a mask, after the resist film R1 is removed, Since the through oxide film 20 remains, when the threshold adjustment ions are implanted into the semiconductor substrate 10 in the second region thereafter, This through oxide film 20 can be used. Further, the ion implantation of the conductive impurity and the removal of the through oxide film for ion implantation are performed using the same mask. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004040093-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007088494-A |
| priorityDate | 2000-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.