http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001196427-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28
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filingDate 2000-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0665033e79cda0a9c8bb5ac2e2fba21
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publicationDate 2001-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001196427-A
titleOfInvention Wafer prober and ceramic substrate used for wafer prober
abstract PROBLEM TO BE SOLVED: To hardly damage a ceramic substrate due to a difference in thermal expansion between a guard electrode and / or a ground electrode and a surrounding ceramic, and even when the temperature rises to a high temperature of 500 ° C. or more. Another object of the present invention is to provide a wafer prober in which the conductivity of the electrode hardly fluctuates due to the reaction between the surrounding ceramic and the guard electrode or the like, and the peeling off at the bonding interface of the external terminal bonded to the through hole does not easily occur. SOLUTION: A chuck top conductor layer is formed on a surface of a ceramic substrate, and inside the ceramic substrate, A wafer prober in which a guard electrode and / or a ground electrode is formed and a through hole is connected to the guard electrode and / or the ground electrode, wherein at least a part of the guard electrode and / or the ground electrode is electrically conductive. A wafer prober comprising a ceramic, wherein the through hole is composed of a high melting point metal.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8080737-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015517225-A
priorityDate 1999-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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