| abstract |
(57) Abstract: Provided is a semiconductor device which prevents surface oxidation of a pad electrode of a highly integrated semiconductor device and has high connection strength with an external terminal. A semiconductor device includes a pad electrode for connecting to an external electrode, and a multilayer wiring structure connected to the pad electrode, the semiconductor device covering the pad electrode and having an opening on the pad electrode. Then, one surface of the insulating film exposing the surface of the pad electrode is in contact with a metal surface made of one noble metal material selected from a noble metal and a metal containing the noble metal as a main component. |