http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001185817-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 |
| filingDate | 1999-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9070bdb39b505bd97efbf7aeb6493a7e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66901eff1f2615b43ad304952358402c |
| publicationDate | 2001-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001185817-A |
| titleOfInvention | Nitride-based semiconductor and semiconductor device |
| abstract | (57) An object of the present invention is to provide a semiconductor device having an active layer whose achievable band gap size is wide. SOLUTION: A semiconductor laser device 100 has a buffer layer 12, an n-GaN contact layer 13, an n-Al 0.1 Ga 0.9 N optical cladding layer 14, an n-type -GaN light guide layer 15, TlGaN / GaN light emitting layer 1 6, a p-Al 0.1 Ga 0.9 N layer 17, a p-GaN optical guide layer 18, a p-Al 0.1 Ga 0.9 N optical cladding layer 19, and a p-GaN contact layer 20 are formed in this order. The TlGaN / GaN light emitting layer 16 is formed by alternately stacking four GaN barrier layers and three TlGaN well layers. In the semiconductor laser device 100, TlGaN The emission wavelength is set by adjusting the composition of Tl of the / GaN light emitting layer 16. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006511948-A |
| priorityDate | 1999-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.