http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001185481-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-467 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2000-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1833e011014cef2079f7e5f49189ea9b |
| publicationDate | 2001-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001185481-A |
| titleOfInvention | Transfer mask |
| abstract | (57) Abstract: A transfer mask manufacturing method capable of easily and stably manufacturing a transfer mask having a highly accurate opening pattern at low cost. SOLUTION: A conductive layer 2 formed on the surface of the substrate, a support frame formed by processing the back surface of the substrate, a thin film supported by the support frame, a through-hole formed in the thin film, , The conductive layer 2 has an actual density of the metal element of more than 6 g / cc and an electric resistivity of 60 μΩ · cm (at 25 ° C) and thermal conductivity of 0.04c It is characterized by being made of a conductive material that is larger than al / cm / cm 2 / sec / ° C., is not magnetic, and can be dry-etched. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010027206-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007171520-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010027206-A2 |
| priorityDate | 2000-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.