| abstract |
PROBLEM TO BE SOLVED: To provide a chemically amplified resist which is sensitive to far ultraviolet rays, particularly excellent in transparency to ArF excimer laser light, excellent in resolution and sensitivity characteristics, adhesion to a substrate, dry etching resistance, and the like. Provided is a chemically amplified resist composition having remarkably excellent developability and the like. SOLUTION: The chemically amplified positive photoresist composition is represented by the following general formula (I), and has a polystyrene standard equivalent weight average molecular weight (Mw) of 3,000 to 50,000 and a molecular weight distribution (Mw / Mn). It comprises a multi-component copolymer having a ratio of 1.0 to 3.0, a low molecular compound additive represented by the following general formula (II) or (III), an acid generator and a solvent. Embedded image |