http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001177106-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2000-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45fd6994e7817513efdd9c5de9e3c627 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d169f1c6b7b9580953aa1417a2b6aab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fa8a8cde2192e27660d9fc000eaaf45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1372f9f14ed51f8caf8f355c6673bf39 |
| publicationDate | 2001-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001177106-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor device having a transistor using a thin film polycrystalline silicon for a channel portion. SOLUTION: The semiconductor device comprises a gate electrode 2, a source electrode, The transistor includes a drain region 3 and a channel portion 4. There is a dangling bond in the source / drain region 3 and the channel portion 4 formed of thin-film polycrystalline silicon, and the characteristics of the transistor deteriorate. In order to terminate the dangling bond, hydrogen is diffused from the plasma silicon nitride film 16 and hydrogen is introduced into the channel portion 4. Since hydrogen cannot pass through the silicon nitride film 6, an opening is made in the silicon nitride film 6, and hydrogen reaches the channel portion 4 along the interface of the metal plug 9 embedded in the opening. By opening the silicon nitride film 6, dangling bonds can be terminated, and the characteristics of the semiconductor device can be improved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108511459-A |
| priorityDate | 1991-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.