| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7f278bf3e3bd12896f71fc0e87dd1684 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate |
1999-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c03480b1083762b680b874c3c27e4ef9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f868dc75e647997ed2c4477b0b25282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b93c7f0d1d1b018bf077661b9af1a6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_457379821af8526813bc25528acc1e37 |
| publicationDate |
2001-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001176818-A |
| titleOfInvention |
Thin film formation method |
| abstract |
PROBLEM TO BE SOLVED: To provide a barrier metal film having low resistance and excellent barrier properties by forming amorphous tantalum nitride and tantalum silicon nitride thin films at low temperature by a CVD method. . SOLUTION: An inorganic tantalum halide and a nitrogen source gas are plasma-decomposed according to a plasma CVD method to form an amorphous tantalum nitride thin film on a substrate, or an inorganic tantalum halide, a nitrogen source gas and a silicon source. Plasma decomposition of gas to form an amorphous tantalum silicon nitride thin film on a substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8222713-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005524991-A |
| priorityDate |
1999-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |