| abstract |
[PROBLEMS] To provide a method for manufacturing a nitride semiconductor substrate by which a heterogeneous substrate such as sapphire used for growing a nitride semiconductor can be favorably removed to obtain a nitride semiconductor substrate. is there. SOLUTION: In a first step, an underlayer 3 made of a nitride semiconductor is grown on a transparent heterogeneous substrate 1, and in a second step, the underlayer 3 is etched to the heterogeneous substrate 1 to form irregularities. A surface on which the nitride semiconductor can grow in the lateral direction is exposed on the side surface of the concave portion, and the first nitride semiconductor 4 is grown on the base layer 3 having the irregularities in the third step to reduce the dislocation. A nitride semiconductor 4 is formed and a gap is formed between the heterogeneous substrate 1 at the bottom of the concave portion and the first nitride semiconductor 4, and then the surface of the heterogeneous substrate 1 on which the underlayer 3 is not formed in the fourth step. The substrate is irradiated with an electromagnetic wave and separated at the interface between the underlayer and the heterogeneous substrate to remove the heterogeneous substrate. |