Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
1999-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c59c11c11c54c6fdec20069dbc49805b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0140fc2734297399bdf5a99a21f9e55c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_308149cc931bcae19c5c129edcc20df0 |
publicationDate |
2001-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2001168322-A |
titleOfInvention |
Semiconductor device and method of manufacturing the same |
abstract |
(57) [Summary] [Problem] V caused by short channel effect and manufacturing variation Provided is a semiconductor device that suppresses variation in th. SOLUTION: A first conductivity type first semiconductor region is provided inside a semiconductor, and the concentration of the first conductivity type impurity contained therein is 分 の of the first conductivity type impurity concentration of the first semiconductor region. A second conductivity type second semiconductor region is provided between the first semiconductor region and the semiconductor surface so as to be smaller than 1. And providing an insulating film and a conductor above the second semiconductor region; A third semiconductor region of a second conductivity type and a fourth semiconductor region are provided so as to include a semiconductor surface and to be in contact with a side surface of the second semiconductor region. This can reduce the variation in the net impurity concentration. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015226059-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104247023-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7285461-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020129694-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014179528-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6956259-B2 |
priorityDate |
1999-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |