| abstract |
(57) Abstract: In an ultrafine pattern forming step in a semiconductor manufacturing process, a composition for an organic antireflection film capable of preventing reflection at a lower film layer of a photoresist film, a method for manufacturing the same, and the use of the composition Provided is a method for forming an organic antireflection film pattern. The composition for an organic antireflection film has the following chemical formula 1. A compound having the structure of Formula 3 is used as a cross-linking agent. The compound having the structure is used as a light absorber. Embedded image Embedded image (In the above formula, b: c is 0.1 to 1.0: 0.1 to Is 1.0, R 1, R 1 1 is hydrogen or methyl group, R 1 , R 2 and R 4 are a side chain or a main chain-substituted alkyl group having 1 to 5 carbon atoms, and R 3 is hydrogen or a side chain or a main chain substituted with 1 to 5 carbon atoms. Is an alkyl group. ) |