| abstract |
(57) Abstract: A polymer compound comprising a cyclic silicon-containing group represented by the following general formula (1) or (2). Embedded image (Where R 1 , R 2 , R 3 , R 6 , R 7 , R 10 , R 11 , R 12 and R 13 each represent a hydrogen atom or a straight chain having 1 to 20 carbon atoms; A branched or cyclic alkyl group, R 4 , R 5 , R 8 , R 9 Is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, a fluorinated alkyl group having 1 to 20 carbon atoms, or an aryl group having 6 to 20 carbon atoms, p, q, r and s are integers of 0 to 10 and 1 ≦ p + q + s ≦ 20. [Effect] The resist material of the present invention is sensitive to high energy rays, and has sensitivity, resolution at wavelengths of 300 nm or less, Excellent oxygen plasma etching resistance. Therefore, the polymer compound and the resist material of the present invention can be a particularly excellent material for a two-layer resist due to these characteristics, and can easily form a fine and perpendicular pattern to the substrate. It is suitable as a fine pattern forming material for VLSI manufacturing. |