| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_04d2380bb7d1a032a47b7037a8346b3c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2000-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ade46ac10002c14834d617095d6f4384 |
| publicationDate |
2001-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001156294-A |
| titleOfInvention |
Power MOS device and manufacturing method thereof |
| abstract |
(57) [Summary] [Problem] Power M for reducing capacitance between electrodes Provide an OS device. A power MOS device uses (1) a gate oxide having a thickness of at least 2 micrometers or more; (2) uses a stepped gate oxide; and (3) uses polysilicon from an area overlapping a drain. Etching, leaving two small polysilicon regions substantially above the channel, leaving no polysilicon region in the area above the drain; (4) etching a small section above the channel region to form three polysilicon regions. The gate-drain capacitance C GD is reduced by leaving an area made of silicon, two of which form a gate on the channel and a third in the area overlapping the drain. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6977414-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004006598-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017228761-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017126690-A |
| priorityDate |
1999-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |