http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001156274-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-945 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-942 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate | 1999-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3de75eeaf96d3c5a1fd1d6b79ab89742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d988c7d349767f18ceabe8509b698f85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f997b5132a27928dfec1d029ba7caa0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fe6eca21e5358f82658bbc39dfd208c |
| publicationDate | 2001-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001156274-A |
| titleOfInvention | Semiconductor memory device and manufacturing method thereof |
| abstract | (57) [Summary] [PROBLEMS] To uniformly execute data erasure on a group of memory cells until all cell thresholds become equal to or less than a reference, and among the group of memory cells from which data is erased, the cell threshold of which is equal to or smaller than a lower threshold. In a semiconductor memory device for replenishing charges, data erasure in a group of memory cells can be completed quickly. SOLUTION: When a manufacturing error causing the erasing speed to be lower than the ideal value occurs in a very small part of the memory cells at a predetermined position in a group, only the memory cell at the position where the manufacturing error occurs has an erasing speed higher than the ideal value. It is formed so that it becomes. When the erasing speed of a very small portion of the group of memory cells is reduced, the erasing of the entire group increases because the erasing becomes excessive in a large part of the group and the charge needs to be replenished. However, if the erasure of only a very small portion of the group of memory cells is performed at a high speed, the erasing of data in the group of memory cells can be completed quickly because the memory cells that are excessively erased and need replenishment of charges are also extremely small. |
| priorityDate | 1999-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.