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filingDate 2000-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e42e326fde64486cd5d479aa5f423cdc
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publicationDate 2001-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001156260-A
titleOfInvention Integrated circuit device, electronic circuit device, circuit manufacturing method
abstract (57) [Problem] To achieve both high performance and power saving of an integrated circuit device in which some circuits always operate and some circuits are appropriately stopped. SOLUTION: A gate insulating film 130 drives a third transistor 123 having the largest thickness at a high voltage, and operates at high speed with a small gate leak current. The gate insulating film 130 drives the thinnest first transistor 121 and the non-thintest second transistor 122 at a low voltage. 2 is always operated, but the first transistor 121 is appropriately stopped. The second transistor 122 always operates at a low speed with a small gate leak current, and the first transistor 1 21 operates at a high speed while appropriately stopping the gate leakage current although the gate leakage current is not very small. Are optimized for use and performance.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004104126-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7248533-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011521474-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8525273-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016184655-A
priorityDate 1999-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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