| abstract |
(57) Abstract: A styrene derivative represented by the following general formula (1). Embedded image (In the formula, R 1 .R 2 represents a hydrogen atom, a straight, branched or cyclic alkyl group or a fluorine-substituted alkyl group, chloro atom, or a trichloromethyl group Represents a phenol protecting group. p, q, and r are each 0 ≦ p <5, 0 ≦ q <5, 0 or a natural number in the range of 0 <r <5, and satisfies 0 <p + q <5. [Effect] A resist material prepared using a polymer obtained by polymerizing the styrene derivative of the present invention includes: Sensitive to high energy rays, less than 200 nm, especially 170 Excellent sensitivity, resolution, and plasma etching resistance at wavelengths of nm or less. Therefore, the compound of the present invention can be a suitable raw material for obtaining a base polymer of a resist material having a small absorption particularly at the exposure wavelength of an F 2 excimer laser, and the resist material using the same can be used as a fine material and a substrate. Can easily form a pattern perpendicular to Therefore, it is suitable as a fine pattern forming material for VLSI manufacturing. |