| abstract |
PROBLEM TO BE SOLVED: To provide a method of planarizing Cu and a Cu alloy by CMP with high production efficiency without or with significantly reduced erosion and without or with significantly reduced dishing and defects. SOLUTION: First, a deposited Cu13 is subjected to CMP with a fixed polishing pad that stops on a barrier layer 12 such as, for example, Ta or TaN. Get rid of. Next, in order to remove the barrier layer 12 and control dishing to 100 ° or less, buffing is selectively performed on Cu: Ta or TaN and Cu: silicon dioxide. |