| abstract |
(57) [Problem] To solve the problem of poor adhesion between a metal wiring made of copper or a copper alloy and a copper diffusion suppressing insulating film, and Provided is a method for manufacturing a semiconductor device in which generation of hillocks is prevented. SOLUTION: After a copper surface is cleaned in a spin cleaning step 24, a wafer surface is processed in an anticorrosion processing step 25, and Cu is removed. The surface of the wiring 17 is subjected to anticorrosion treatment. Anticorrosion solution is 1% BT A BTA aqueous solution to which A is added is prepared, and while rotating the semiconductor wafer, the BTA aqueous solution is sprayed onto the wafer surface at a flow rate of 1 liter / min for 10 seconds to prevent corrosion of the Cu film. Since the Cu-BTA compound is formed on the surface of the Cu wiring 17 as an anticorrosion film, the surface of the Cu wiring is not oxidized even when left in the air. For this reason, even if a Si 3 N 4 film is subsequently formed, good adhesion at the Cu / Si 3 N 4 interface can be obtained. |