abstract |
(57) [PROBLEMS] To efficiently remove and planarize an unnecessary film layer of a buried film such as a metal in a recess CMP technique such as formation of a buried metal wiring and to easily perform process management. The present invention provides a metal polishing liquid and a method for polishing a substrate using the same, which can form a buried pattern of a metal film with high reliability. The polishing liquid contains a metal oxidizing agent, a metal oxide dissolving agent, a protective film forming agent, a water-soluble polymer, and water, and has a polishing pressure-dependent inflection point in the polishing rate. Is P, the effective polishing pressure of the concave portion of the substrate on which the pattern is formed is P 1 , and the effective polishing pressure of the convex portion is P 2 , A metal polishing liquid whose polishing liquid composition is adjusted so that the pressure P ′ at which an inflection point appears in the polishing rate of a substrate without a pattern is P 1 <P <P ′ <P 2 is used. |