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filingDate 2000-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dec4d1ff9bbf4d655bc09a747cbae06
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publicationDate 2001-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001144015-A
titleOfInvention Laser apparatus and laser annealing method
abstract (57) [Problem] To provide a laser annealing method for obtaining a crystalline semiconductor film having a large crystal grain size. SOLUTION: When crystallizing an amorphous semiconductor film by irradiating a laser beam, the laser beam is applied to the front and back surfaces of the amorphous semiconductor film. In addition, the ratio (I 0 ′ / I 0 ) of the effective energy intensity (I 0 ) of the laser light applied to the front surface and the effective energy intensity (I 0 ′) of the laser light applied to the back surface at that time is 0. <I 0 '/ I 0 <1 or 1 <I It is characterized in that a relationship of 0 ′ / I 0 is established.
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priorityDate 1999-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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