http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001135821-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 1999-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0542f2c4117dffda3e005c52f2cbc64 |
| publicationDate | 2001-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001135821-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Summary] [PROBLEMS] To use a SIMOX method to remove S directly below a gate electrode. The thickness of the OI layer is thin, the thickness of the SOI layer in the source / drain portion is thick, and a fully-depleted SOI-MOSFET having high driving capability is self-aligned. SOLUTION: A step of forming a dummy gate 17 on a semiconductor substrate 11, a step of ion-implanting oxygen into the semiconductor substrate 11, and a step of applying a heat treatment to the semiconductor substrate 11 to form a buried oxide film 18 in a region where the oxygen is ion-implanted. This is a method for manufacturing a semiconductor device, comprising: a forming step; a step of removing a dummy gate 17; and a step of forming a gate electrode 44 via a gate insulating film 41 in a region where the dummy gate 17 is removed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6885066-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100955934-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016040851-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6680243-B1 |
| priorityDate | 1999-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.