| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-43 |
| filingDate |
1999-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27592472705abfcae72b068b228d6bf5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb0de79e456d77c2e47e1ca8d99edde5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73eaefd5d2ee908c6bef54af0b75d2a3 |
| publicationDate |
2001-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001130958-A |
| titleOfInvention |
Method of manufacturing piezoelectric thin film or ferroelectric thin film |
| abstract |
(57) [Problem] When a piezoelectric / ferroelectric thin film is manufactured using a post-annealing method represented by a sol-gel method, it is difficult to control the crystal orientation. In a drying step of a raw material solution, when a maximum temperature of substrate heating is T ° C. and a heating time at this temperature is t minutes, a condition represented by 350 ≦ T ≦ 450t-5t (0 <t) is satisfied. To heat the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008120644-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006049792-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015130491-A |
| priorityDate |
1999-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |