http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001117230-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
filingDate | 1999-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_011a1a34e0710f341a81c9dd1d273ea7 |
publicationDate | 2001-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2001117230-A |
titleOfInvention | Positive photoresist composition |
abstract | PROBLEM TO BE SOLVED: To provide a resist pattern having a high sensitivity, a high resolution of 0.15 μm or less and a rectangular shape in the manufacture of a semiconductor device, and has good wettability to a developer. To provide a positive photoresist composition having few development defects and a positive photoresist composition having a small dimensional shift when transferring a pattern to a lower layer in an oxygen plasma etching step in a two-layer resist method. thing. SOLUTION: An acid-decomposable polymer containing a specific silicon-containing repeating unit and at least any one of repeating units having a specific structure, and having an increased solubility in an alkali developer due to the action of an acid. Positive photoresist composition characterized by the following |
priorityDate | 1999-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 315.