| abstract |
(57) Abstract: In a gallium nitride-based compound semiconductor light emitting device having an n-type electrode formed on the same plane as a p-type pad electrode and a p-type translucent electrode, light is emitted from the n-type electrode. And the external luminous efficiency is reduced. SOLUTION: P- and N-electrodes are provided on the same plane, the N-electrode is composed of an N-type peripheral electrode and an N-type pad electrode, and the surface of the N-type peripheral electrode is lower than the lower surface of the light emitting layer. Formed. |