http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001102384-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b27deaf45890893586c2ed77ac13dc32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 |
| filingDate | 1999-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad5bc1292d1cdc40a66d19fcfec02236 |
| publicationDate | 2001-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001102384-A |
| titleOfInvention | Manufacturing method of epitaxial silicon wafer |
| abstract | PROBLEM TO BE SOLVED: To suppress the formation of heterogeneous oxygen precipitate nuclei in an epitaxial silicon wafer provided with IG capability, and to perform processing in a relatively short time without forming BMD near the silicon wafer surface. Providing a manufacturing method with excellent IG capability. A single crystal silicon to which carbon is added by CZ method generates and grows latent nuclei on the entire crystal by low-temperature treatment, and then performs a medium temperature heat treatment to shrink and dissolve the latent nuclei on the substrate surface. At the same time, by growing and forming the BMD inside the substrate, the BMD can be exposed inside the wafer without the BMD being exposed on the surface layer of the wafer, and the BMD density in the crystal growth method can be controlled with less variation. Further, when an epitaxial film is formed on this substrate, no surface defects occur, and a BMD is formed only inside the substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008133188-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140084049-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9425345-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112012003985-B4 |
| priorityDate | 1999-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.