http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001102327-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
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filingDate 2000-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a92ca0c927ce7d2c6d2e6da89f2ad76
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publicationDate 2001-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001102327-A
titleOfInvention Ohmic layer formation method by plasma enhanced chemical vapor deposition
abstract PROBLEM TO BE SOLVED: To provide a method for forming an ohmic layer by plasma enhanced chemical vapor deposition (PCVD), which can improve the resistivity characteristics and the problem of damage to the surface of a semiconductor substrate when forming titanium silicide as an ohmic layer. I will provide a. SOLUTION: A first step of inserting a semiconductor substrate into a plasma chamber of a chemical vapor deposition apparatus and injecting hydrogen and argon gas, a second step of injecting a source gas containing Ti into the plasma chamber, and A step of forming an RF plasma to deposit a titanium film by a PCVD method.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010056567-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008103370-A
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priorityDate 1999-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.