| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-00 |
| filingDate |
1999-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56273294d768a6eb535c01b3fbad53aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_816f586373a5918900b41b13de9c9b34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c08685d1818d60744e857ba9b0e0550
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d84e95bcd5d85e5b783ef2e19e9300d6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b51af23dd9aecc0e718b8d51bc4e13b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71e66b15bf48d509c6e39780a59dadbb |
| publicationDate |
2001-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001089896-A |
| titleOfInvention |
Plating method, plating solution, semiconductor device and method of manufacturing the same |
| abstract |
(57) Abstract: In a copper plating process for a semiconductor, there is provided an additive and a film forming method in which copper plating is preferentially advanced in a groove having a width of 1 μm or less or a hole having a diameter of 1 μm or less and voids are not generated. . In a process of forming a film on a substrate having a groove having a height h and a width w or a hole having a radius w, a diffusion coefficient D of a material (additive) which inhibits film formation by being added is added. When the ratio of [m 2 / s] and the reaction rate κ [m / s] of adsorption or consumption on the surface is D / κ, an additive and a film forming process that simultaneously satisfy the following two inequalities are used. 0.005 × h 2 /w<D/κ<0.5×h 2 / w, 0.0 1 <Θ ≦ 0.7 Here, Θ is (film deposition rate with additive) / (film deposition rate without additive) at the same plating potential. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200066580-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4672189-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002368384-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102265825-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11015260-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11603602-B2 |
| priorityDate |
1999-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |