Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6659fbff805bea5b0916b324fe54ca5c |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24975 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2217-78 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3615 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3626 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3644 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3652 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-366 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3681 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B60J1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B18-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B15-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-10 |
filingDate |
2000-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_faaa10cbd10ddae40f2cd0a14d785ce7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_394807b91d63150d82270f731a69f4c0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e95c7705613017e11bcb07ba89cb2472 |
publicationDate |
2001-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2001089197-A |
titleOfInvention |
Transparent article having protective silicon nitride film |
abstract |
(57) Abstract: A transparent article having a protective silicon nitride film is provided. A transparent article comprising a transparent nonmetallic substrate and a transparent film stack sputter deposited on the substrate. The film stack is characterized in that it comprises at least one infrared-reflective metal film, a dielectric film on the metal film, and a protective silicon nitride film with a thickness of 10 ° to 150 ° on the dielectric film. The dielectric film desirably has substantially the same refractive index as silicon nitride and is in contact with the silicon nitride film. |
priorityDate |
1994-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |